• Part: IPD25N06S2-40
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 146.05 KB
Download IPD25N06S2-40 Datasheet PDF
Infineon
IPD25N06S2-40
IPD25N06S2-40 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 V 40 mΩ 29 A PG-TO252-3-11 Type IPD25N06S2-40 Package Marking PG-TO252-3-11 2N0640 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=25A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 29 116 80 ±20 68 -55 ... +175 55/175/56 Unit A m J V W °C Rev. 1.0 page 1 2006-07-18 Parameter...