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SIGC121T120R2C - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Key Features

  • 1200V NPT technology 200µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • power module BSM 75GD120DN2.

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www.DataSheet4U.com SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM 75GD120DN2 Applications: • drives C G E Chip Type VCE ICn 75A Die Size 11.08 X 11.08 mm2 Package sawn on foil Ordering Code Q67041A4682-A003 SIGC121T120R2C 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.08 X 11.08 8 x ( 2.99 x 1.97 ) 1.46 x 0.8 122.8 / 99.