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SIGC121T120R2CS - IGBT

Description

Eupec FS75R12KS4 AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies

Features

  • 1200V NPT technology 175µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • IGBT Modules.

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Datasheet Details

Part number SIGC121T120R2CS
Manufacturer Infineon Technologies
File Size 96.49 KB
Description IGBT
Datasheet download datasheet SIGC121T120R2CS Datasheet
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www.DataSheet4U.com SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type VCE ICn 75A Die Size 11.08 X 11.08 mm2 Package sawn on foil Ordering Code Q67050A4074-A003 SIGC121T120R2CS 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.08 X 11.08 8 x (2.99 x 1.97) 1.46 x 0.8 122.
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