Datasheet4U Logo Datasheet4U.com

SIGC121T60NR2C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog BSM 150 GD 60 DLC Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies

Features

  • 600V NPT technology 100µm chip.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • IGBT Modules.

📥 Download Datasheet

Datasheet preview – SIGC121T60NR2C

Datasheet Details

Part number SIGC121T60NR2C
Manufacturer Infineon Technologies
File Size 92.16 KB
Description IGBT
Datasheet download datasheet SIGC121T60NR2C Datasheet
Additional preview pages of the SIGC121T60NR2C datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives C G E Chip Type VCE ICn 150A Die Size 11 x 11 mm2 Package sawn on foil Ordering Code Q67041-A4684A001 SIGC121T60NR2C 600V MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11 x 11 121 / 102.5 8x 6.2 x 2.55 mm 2 1.51 x 0.
Published: |