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SIGC223T120R2CL - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V NPT technology.
  • 180µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • IGBT-Modules BSM150GB120DLC.

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Datasheet Details

Part number SIGC223T120R2CL
Manufacturer Infineon
File Size 94.98 KB
Description IGBT
Datasheet download datasheet SIGC223T120R2CL Datasheet
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www.DataSheet4U.com SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules BSM150GB120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 SIGC223T120R2CL 1200V 150A MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 x 15.5 223.2 / 189.9 8x( 3.67x6.77 ) 1.49 x 1.
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