SIGC25T120C Datasheet | Infineon

.. Preliminary IGBT Chip in NPT-technology Features : - 1200V NPT technology - 200µm chip - positive temperature coefficient - easy paralleling This chip is used for: - BUP 213 Applications: - drives Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code C67078-A4674sawn on foil A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment 5.71 x 4.53 2 x ( 2.18 x 1.6 ) 1.09 x 0.68...