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Preliminary
SIGC25T120CS
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
This chip is used for: •
C
Applications: • drives, SMPS, resonant applications
G
E
Chip Type SIGC25T120CS
VCE 1200V
ICn 15A
Die Size 5.71 x 4.53 mm2
Package sawn on foil
Ordering Code Q67050-A4114
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x (2.18 x 1.6) 1.09 x 0.68 25.9 / 18.
SIGC25T120CS Datasheet
