Click to expand full text
www.DataSheet4U.com
Preliminary
SIGC25T120CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
This chip is used for: • power module BSM15GD120DLC E3224 Applications: • drives
G
C
E
Chip Type SIGC25T120CL
VCE 1200V
ICn 15A
Die Size 5.71 x 4.53 mm2
Package
Ordering Code Q67041sawn on foil A4704-A003
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x ( 2.18 x 1.6 ) 1.09 x 0.68 25.9 / 18.
SIGC25T120CL Datasheet
