AIMZH120R010M1T - 1200V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	AIMZH120R010M1T
Manufacturer	Infineon
File Size	1.62 MB
Description	1200V SiC Trench MOSFET
Datasheet	AIMZH120R010M1T Datasheet
Additional preview pages of the AIMZH120R010M1T datasheet.

Product details

Description

Pin definition: 1 drain 2 source 3 Kelvin sense contact 4 gate Type AIMZH120R010M1T Package PG-TO247-4-STD-NT6.7 Marking A12M1T010 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-11-29 AIMZH120R010M1T CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description

Features

PG-TO247-4-STD-NT6.7.
VDSS = 1200 V at Tvj = -55175°C.
IDDC = 202 A at TC = 25°C.
RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C.
New performance-optimized chip technology (Gen1p) with improved RDSon.
A FOM.
Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on).
Best in class switching energy for lower switching losses and reduced cooling efforts.
Lowest device capacitances for higher switching speeds and higher.

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Published: May 13, 2025 |