Infineon Technologies AIMZH120R010M1T
1200V SiC Trench MOSFET
| Part No. | AIMZH120R010M1T |
|---|---|
| Datasheet | AIMZH120R010M1T Download |
| Manufacturer |  Infineon Technologies |
| Description | 1200V SiC Trench MOSFET |
| Buy | Stock & Price |
FEATURES
PG-TO247-4-STD-NT6.7● VDSS = 1200 V at Tvj = -55...175°C
● IDDC = 202 A at TC = 25°C
● RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
● New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM
● Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
● Best in class switching energy for lower switching losses and reduced cooling efforts
● Lowest device capacitances for higher switching speeds and higher power density 2021-10-27 restricted
● A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
● Reduced total gate charge QGtot for lower driving power and losses
● .XT die attach technology for best in class thermal performance
● Sense pin for optimized switching performance
● Suitable for HV creepage requirements Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications
● On-board charger
● DC/DC converter
● Auxiliary drives Product validation
● Qualified for Automotive
APPLICATIONS
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