AIMZHN120R010M1T Datasheet | Infineon

Cool Si C™ 1200 V Si C Trench MOSFET Final datasheet Cool Si C™ 1200 V Si C Trench MOSFET Features PG-TO247-4-STD-NN6.7 - VDSS = 1200 V at Tvj = -55...175°C - IDDC = 202 A at TC = 25°C - RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C - New performance-optimized chip technology (Gen1p) with improved RDSon- A FOM - Increased remended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) - Best in class switching energy for lower switching losses and reduced cooling efforts - Lowest device capacitances for higher switching speeds and higher power density 2021-10-27 restricted - A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving - Reduced total gate charge QGtot for lower driving power and losses - .XT die attach technology for best in class thermal performance - Sense pin for optimized switching performance - Suitable for HV creepage requirements Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications - On-board charger - DC/DC converter - Auxiliary drives Product validation - Qualified for Automotive Applications. Product Validation according to AEC-Q100/101 Description Pin definition: 1 - drain 2 - source 3 - Kelvin sense contact 4 - gate Type AIMZHN120R010M1T...