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AIMZHN120R010M1T - 1200V SiC Trench MOSFET

General Description

Pin definition: 1 drain 2 source 3 Kelvin sense contact 4 gate Type AIMZHN120R010M1T Package PG-TO247-4-STD-NN6.7 Marking A12M1N010 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision

Key Features

  • PG-TO247-4-STD-NN6.7.
  • VDSS = 1200 V at Tvj = -55175°C.
  • IDDC = 202 A at TC = 25°C.
  • RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C.
  • New performance-optimized chip technology (Gen1p) with improved RDSon.
  • A FOM.
  • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on).
  • Best in class switching energy for lower switching losses and reduced cooling efforts.
  • Lowest device capacitances for higher switching speeds and higher.

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Full PDF Text Transcription for AIMZHN120R010M1T (Reference)

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AIMZHN120R010M1T CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET Features PG-TO247-4-STD-NN6.7 • VDSS = 1200 V at Tvj = -55...175°C • ...

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Features PG-TO247-4-STD-NN6.7 • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 202 A at TC = 25°C • RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest device capacitances for higher switching speeds and higher power density 2021-10-27 restricted • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving • Reduced total gate charge

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