AIMZHN120R010M1T Overview
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-11-30 AIMZHN120R010M1T CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description.
AIMZHN120R010M1T Key Features
- VDSS = 1200 V at Tvj = -55...175°C
- IDDC = 202 A at TC = 25°C
- RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved RDSon- A FOM
- Increased remended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
- Best in class switching energy for lower switching losses and reduced cooling efforts
- Lowest device capacitances for higher switching speeds and higher power density
- A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
- Reduced total gate charge QGtot for lower driving power and losses
- XT die attach technology for best in class thermal performance