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AUIRF952Q - Dual N/P-Channel MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Overview

  AUTOMOTIVE GRADE AUIRF9952Q.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N and P Channel MOSFET.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Full Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 N-.