Infineon Technologies BAS3010A
Medium Power AF Schottky Diode
| Part No. | BAS3010A |
|---|---|
| Datasheet | BAS3010A Download |
| Manufacturer |  Infineon Technologies |
| Description | Medium Power AF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.5) Non-repetitive peak surge forward current (t ≤ 10ms) Junction temperature Operating temperature Storage temperature 1Pb-containing 2For I FSM Tj °C range T op T stg package may be available upon special request TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves. 1 2007-04-10 BAS3010A... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W UnitELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 170 220 290 350 410 220 270 340 410 470 5 10 40 25 50 200 µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 28 35 pF calculation of RthJA please refer to Application Note Thermal Resistance test: tp = 300 µs; D = 0.01 2Pulsed 2 2007-04-10 BAS3010A...
