Infineon Technologies BAS3010S
Low VF Schottky Diode
| Part No. | BAS3010S |
|---|---|
| Datasheet | BAS3010S Download |
| Manufacturer |  Infineon Technologies |
| Description | Low VF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage2) Forward current2)3) Repetitive peak forward current3) (tp ≤ 1 ms, D ≤ 0.25) Non-repetitive peak surge forward current3) (t ≤ 10 ms) Junction temperature Operating temperature range Storage temperature 1Pb-containing 2For 3Only Symbol VR IF IFRM IFSM Tj Top Tstg Value 30 1 3.5 5 150 -55 ... 125 -65 ... 150 Unit V A °C package may be available upon special request TA > 25°C the derating of VR and IF has to be considered. valid if pin 1 and 2 are connected in parallel 1 2007-08-16 BAS3010S... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 38 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 100 mA IF = 350 mA IF = 1000 mA VF 340 400 570 15 30 300 390 450 650 Unit µA mV AC Characteristics Diode capacitance VR = 5...
