Infineon Technologies BAS3010B
Medium Power AF Schottky Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.5) Non-repetitive peak surge forward current (t ≤ 10 ms) Junction temperature Operating temperature range Storage temperature 1Pb-containing 2 I FSM Tj T op T stg °C package may be available upon special request For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves. 1 2007-04-19 BAS3010B... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 230 300 360 420 480 280 350 420 480 550 5 10 20 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 33 40 pF calculation of RthJA please refer to Application Note Thermal Resistance test: tp = 300 µs; D = 0.01 2Pulsed 2 2007-04-19 BAS3010B...