Infineon Technologies BAV70S
Silicon Switching Diode
| Part No. | BAV70S |
|---|---|
| Datasheet | BAV70S Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t = 1 ms t = 1 s single t = 1 s double Value 80 85 200 4.5 1 0.5 0.75 Total power dissipation BAV70, TS ≤ 33°C BAV70S, TS ≤ 85°C BAV70U, TS ≤ 90°C BAV70W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 ... 150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV70...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 85 - -V Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR µA - - 0.15 - - 30 - - 50 Forward voltage...
