Nexperia BAV70S
High-speed switching double diode
FEATURES AND BENEFITS
● High switching speed: trr ≤ 4 ns● Low capacitance: Cd ≤ 1.5 pF
● Low leakage current
● Reverse voltage: VR ≤ 100 V
● Very small SMD plastic package 3.
APPLICATIONS
● High-speed switching● General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 0.5 µA - - 100 V - - 4 ns Nexperia BAV70S High-speed switching double diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
Simplified outline 1 A1 anode (diode 1) 2 A2 anode (diode 2) 3 K3; K4 common cathode (diode 3 and diode 4) 654 4 A3 anode (diode 3) 5 A4 anode (diode 4) 123 6 K1; K2 common cathode (diode 1 TSSOP6 (SOT363) and diode 2) Graphic symbol K1; K2 A4 A3 A1 A2 K3; K4 006aab104 6. Ordering information Table 3. Ordering information Type number Package Name BAV70S TSSOP6DESCRIPTION
Version plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363 2.1 mm x 1.25 mm x 0.95 mm body 7.