Infineon Technologies BC856S
PNP Silicon AF Transistor
MAXIMUM RATINGS
Parameter Collector-emitter voltage BC856S/U BC857S Symbol VCEO Value 65 45 Collector-base voltage BC856S, BC856U BC857S VCBO 80 50 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipationTS ≤ 115 °C, BC856S TS ≤ 118 °C, BC856U, BC857U Junction temperatur