NXP Semiconductors BC856S
100mA PNP/PNP general-purpose transistor
| Part No. | BC856S |
|---|---|
| Datasheet | BC856S Download |
| Manufacturer |  NXP Semiconductors |
| Description | 100mA PNP/PNP general-purpose transistor |
| Buy | Stock & Price |
FEATURES
I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain I Reduces number of components and board space I No mutual interference between the transistors 1.3APPLICATIONS
I General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VCEO IC hFE collector-emitter voltage open base collector current DC current gain VCE = −5 V; IC = −2 mA Min Typ Max Unit --110 - −65 −100 - V mA 2. Pinning information Table 2. Pin 1 2 3 4 5 6 PinningDESCRIPTION
emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 Simplified outline Graphic symbol 654 654 123 TR2 TR1 123 sym018 NXP Semiconductors BC856S 65 V, 100 mA PNP/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package NameDESCRIPTION
BC856S SC-88 plastic surface-mounted package; 6 leads Version SOT363 4. Marking Table 4. Marking codes Type number BC856S [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
