Siemens BC856S
PNP Silicon AF Transistor
| Part No. | BC856S |
|---|---|
| Datasheet | BC856S Download |
| Manufacturer |  Siemens |
| Description | PNP Silicon AF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Symbol Value 65 80 80 5 100 200 250 150 - 65...+150 mW °C mA Unit V VCEO VCBO VCES VEBO IC I CM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -12-1998 BC 856SELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5 Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE 65 80 80 5 - V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E =...
