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BSC010N04LS - Power MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for sychronous rectification.
  • 175°C rated.
  • Very low on‑resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N‑channel, logic level.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public BSC010N04LS Final datasheet MOSFET OptiMOS™ Power‑MOSFET, 40 V Features • Optimized for sychronous rectification • 175°C rated • Very low on‑resistance RDS(on) • 100% avalanche tested • Superior thermal resistance • N‑channel, logic level • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss Qg (0V..10V) Key Performance Parameters Value Unit 40 V 1.