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BSC010N04LSI - 40V MOSFET

General Description

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Key Features

  • Optimized for synchronous rectification.
  • Integrated monolithic Schottky-like diode.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • N-channel, logic level.
  • Qualified according to JEDEC1) for target.

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BSC010N04LSI MOSFET OptiMOSTMPower-MOSFET,40V Features •Optimizedforsynchronousrectification •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on) •100%avalanchetested •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.05 mΩ ID 275 A QOSS 83 nC QG(0V..