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BSC010N04LSC - 40V MOSFET

General Description

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Key Features

  • UL-2595 standard1) compliant with increased creepage distance.
  • Drain to source distance increased to min. 1.5mm.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC2) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC010N04LSC(UL2595) MOSFET OptiMOSTM5Power-Transistor,40V Features •UL-2595standard1)compliantwithincreasedcreepagedistance •Draintosourcedistanceincreasedtomin.1.5mm •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC2)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.05 mΩ ID 282 A Qoss 84 nC QG(0V..