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BSC150N03LD G
OptiMOS™3 Power-Transistors
Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Product Summary
V DS R DS(on),max ID
30 15 20 PG-TDSON-8
V mΩ A
Type BSC150N03LD G
Package PG-TDSON-8
Marking 150N03LD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
Value
Unit
≤10 secs steady state
20 A
V GS=10 V, T C=100 °C
20
V GS=4.5 V, T C=25 °C
V GS=4.
BSC150N03LDG Datasheet
