BSC159N10LSF Description
BSC159N10LSF G OptiMOS™2 Power-Transistor.
BSC159N10LSF Key Features
- N-channel, logic level
- Very low gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant; Halogen Free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- 55 ... 150
- case R thJC