BSC159N10LSF
BSC159N10LSF is Power Transistor manufactured by Infineon.
- Part of the BSC159N10LSFG comparator family.
- Part of the BSC159N10LSFG comparator family.
BSC159N10LSF G
Opti MOS™2 Power-Transistor
Features
- N-channel, logic level
- Very low gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
Product Summary V DS R DS(on),max ID
100 V 15.9 mΩ 63 A
PG-TDSON-8
- Pb-free lead plating; Ro HS pliant; Halogen Free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type BSC159N10LSF G
Package PG-TDSON-8
Marking 159N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C
T C=100 °C
T A=25 °C, R th JA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse Gate source voltage
E AS V GS
I D=50 A, R GS=25 Ω
Power dissipation Operating and storage...
