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BSC159N10LSF - Power Transistor

Download the BSC159N10LSF datasheet PDF. This datasheet also covers the BSC159N10LSFG variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, logic level.
  • Very low gate charge x R DS(on) product (FOM).
  • Low on-resistance R DS(on).
  • 150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.9 mΩ 63 A PG-TDSON-8.
  • Pb-free lead plating; RoHS compliant; Halogen Free.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC159N10LSFG-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BSC152N10NSFG Power-Transistor Infineon Technologies
BSC105N10LSFG Power-Transistor Infineon Technologies
BSC106N025SG Power-Transistor Infineon Technologies
BSC110N06NS3G Power-Transistor Infineon Technologies
BSC118N10NSG Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
BSC159N10LSFG Power Transistor
BSC150N03LDG Power-MOSFET
BSC152N15LS5 150V MOSFET
BSC155N06ND 60V MOSFET
BSC100N03LSG Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC159N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.