BSC159N10LSFG - Power Transistor

Datasheet Summary

Features

N-channel, logic level.
Very low gate charge x R DS(on) product (FOM).
Low on-resistance R DS(on).
150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.9 mΩ 63 A PG-TDSON-8.
Pb-free lead plating; RoHS compliant; Halogen Free.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSC159N10LSFG
Manufacturer	Infineon
File Size	426.48 KB
Description	Power Transistor
Datasheet	BSC159N10LSFG Datasheet
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Full PDF Text Transcription

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BSC159N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.

Published: Dec 5, 2016 |