• Part: BSC159N10LSFG
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 426.48 KB
Download BSC159N10LSFG Datasheet PDF
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Datasheet Summary

BSC159N10LSF G OptiMOS™2 Power-Transistor Features - N-channel, logic level - Very low gate charge x R DS(on) product (FOM) - Low on-resistance R DS(on) - 150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.9 mΩ 63 A PG-TDSON-8 - Pb-free lead plating; RoHS pliant; Halogen Free - Qualified according to JEDEC1) for target application - Ideal for high-frequency switching and synchronous rectification - Halogen-free according to IEC61249-2-21 Type BSC159N10LSF G Package PG-TDSON-8 Marking 159N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50...