Datasheet Summary
SIPMOS ® Power Transistor
BUZ 31 H
- N channel
- Enhancement mode
- Avalanche-rated
- Normal Level . Pb-free lead plating; RoHs pliant . Halogen-free according to IEC61249-2-21
Type BUZ 31 H
VDS 200 V
ID 14.5 A
RDS(on)
0.2 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C Pulsed drain current
TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25 ˚C Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation TC = 25 ˚C Operating temperature
Storage temperature Thermal resistance, chip case
Thermal resistance, chip to...
