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FS3L200R10W3S7F_B11 - IGBT

Features

  • CoolSiCTM Schottky diode gen 5.
  • Low switching losses.
  • TrenchstopTM IGBT7 Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • Compact design.
  • PressFIT contact technology Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 1.

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Datasheet preview – FS3L200R10W3S7F_B11

Datasheet Details

Part number FS3L200R10W3S7F_B11
Manufacturer Infineon
File Size 1.13 MB
Description IGBT
Datasheet download datasheet FS3L200R10W3S7F_B11 Datasheet
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FS3L200R10W3S7F_B11 EasyPACK™ModulmitTRENCHSTOP™IGBT7undCoolSiC™SchottkyDiodeundPressFIT/NTC EasyPACK™modulewithTRENCHSTOP™IGBT7andCoolSiC™SchottkydiodeandPressFIT/NTC PotentielleAnwendungen • 3-Level-Applikationen • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • CoolSiCTMSchottkyDiodeGen5 • NiedrigeSchaltverluste • TrenchstopTMIGBT7 MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik VCES = 950V IC nom = 100A / ICRM = 200A PotentialApplications • 3-level-applications • Solarapplications • UPSsystems ElectricalFeatures • CoolSiCTMSchottkydiodegen5 • Lowswitchinglosses • TrenchstopTMIGBT7 MechanicalFeatures • Al2O3substrat
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