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FS3L40R07W2H5F_B11 - IGBT

Key Features

  • CoolSiCTM Schottky diode gen 5.
  • Increased blocking voltage capability up to 650V.
  • Low switching losses Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Compact design.
  • PressFIT contact technology.
  • Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode.

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FS3L40R07W2H5F_B11 EasyPACK™ModulmitTRENCHSTOP™5H5undCoolSiC™SchottkyDiodeundPressFIT/NTC EasyPACK™modulewithTRENCHSTOP™5H5andCoolSiC™SchottkydiodeandPressFIT/NTC PotentielleAnwendungen • 3-Level-Applikationen • Motorantriebe • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • CoolSiCTMSchottkyDiodeGen5 • ErhöhteSperrspannungsfestigkeitauf650V • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • KompaktesDesign • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern VCES = 650V IC nom = 40A / ICRM = 80A PotentialApplications • 3-level-applications • Motordrives • Solarapplications • UPSsystems ElectricalFeatures • CoolSiCTMSchottkydiodegen5 • Increased