Infineon Technologies IAUC60N10S5L110
The parameter is not subject to production test - verified by design/characterization.| Part No. | IAUC60N10S5L110 |
|---|---|
| Datasheet | IAUC60N10S5L110 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ power MOSFET for automotive applications● N-channel - Enhancement mode - Logic Level
● MSL1 up to 260°C peak reflow
● 175 °C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 11 mW 60 A PG-TDSON-8-33 1 1 Type IAUC60N10S5L110 Package Marking PG-TDSON-8-33 5N10L110 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current ID T C=25 °C, V GS=10 V 1,2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature T C=100 °C, V GS=10 V 1,2) I D,pulse T C=25 °C E AS I D=24 A I AS - V GS - P tot T C=25 °C T j, T stg - Value Unit 60 A 42 240 31 mJ 24 A ±20 V 88 W -55 ... +175 °C Rev. 1.0 page 1 2021-01-19 IAUC60N10S5L110 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient3) R thJA - Electrical characteristics, at T j=25 °C, unless otherwise specified min.
