Click to expand full text
IAUC60N10S5L110
OptiMOS™-5 Power Transistor
Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 11 mW 60 A
PG-TDSON-8-33
1 1
Type IAUC60N10S5L110
Package
Marking
PG-TDSON-8-33 5N10L110
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current
ID
T C=25 °C, V GS=10 V 1,2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
T C=100 °C, V GS=10 V 1,2)
I D,pulse T C=25 °C
E AS
I D=24 A
I AS
-
V GS
-
P tot
T C=
IAUC60N10S5L110 Datasheet
