IGC19T65QE
IGC19T65QE is IGBT manufactured by Infineon.
Features
:
- 650V Trench & Field Stop technology
- high speed switching series third generation
- low VCE(sat)
- low EMI
- low turn-off losses
- positive temperature coefficient
- qualified according to JEDEC for target applications
Remended for:
- discrete ponents and modules
Applications:
- uninterruptible power supplies
- welding converters
- converters with high switching frequency
Chip Type
ICn1)
Die Size
Package
IGC19T65QE 650V 40A 4.84 x 3.98 mm2 sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test
- verified by design/characterization
Mechanical Parameters Die size Emitter pad size Gate pad size
4.84 x 3.98 See chip drawing
0.608 x 0.646 mm2
Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside
µm
200 mm
Photoimide
Pad metal
3200 nm Al Si Cu
Backside metal
Ni Ag
- system
Die...
