IKQ75N120CH3 - IGBT

Description

Features

C High speed H3 technology offers:.
High efficiency in hard switching and resonant topologies.
10µsec short circuit withstand time at Tvj=175°C.
Easy paralleling capability due to positive temperature coefficient in VCEsat.
Low EMI.
Low Gate Charge QG.
Very soft, fast recovery full current anti-parallel diode.
Maximum junction temperature Tvjmax=175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectr.

Infineon

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Datasheet Details

Part number	IKQ75N120CH3
Manufacturer	Infineon
File Size	1.59 MB
Description	IGBT
Datasheet	IKQ75N120CH3 Datasheet

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Full PDF Text Transcription

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IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode Features: C HighspeedH3technologyoffers: •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •MaximumjunctiontemperatureTvjmax=175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |