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IKQ75N120CT2 - IGBT

Description

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Features

  • C.

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IKQ75N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT LowVce(sat)IGBTinTRENCHSTOP™2technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlledDiode  Features: C TRENCHSTOP™2technologyoffers: •VerylowVCE(sat),1.75Vatnominalcurrent •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) •LowEMI •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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