IMW65R057M1H Datasheet | Infineon

Features - Optimized switching behavior at higher currents - mutation robust fast body diode with low Qfr - Superior gate oxide reliability - Tj,max=175°C and excellent thermal behavior - Lower RDS(on) and pulse current dependency on temperature - Increased avalanche capability - patible with standard drivers - Kelvin source provides up to 4 times lower switching losses Benefits - Unique bination of high performance, high reliability and ease of use - Ease of use and integration - Suitable for topologies with continuous hard mutation - Higher robustness and system reliability - Efficiency improvement - Reduced system size leading to higher power density Potential applications - SMPS - UPS (uninterruptable power supplies) - Solar PV inverters - EV charging infrastructure - Energy storage and battery formation - Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS @ TJ = 25 °C RDS(on),typ 57 mΩ RDS(on),max 74 mΩ QG,typ 28 n C IDM,max Qoss @ 400...