Datasheet4U Logo Datasheet4U.com

IMW65R057M1H - 650V MOSFET

📥 Download Datasheet

General Description

1 Maximum ratings 3 T

Overview

Public IMW65R057M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years.

Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use.

Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Key Features

  • Optimized switching behavior at higher currents.
  • Commutation robust fast body diode with low Qfr.
  • Superior gate oxide reliability.
  • Tj,max=175°C and excellent thermal behavior.
  • Lower RDS(on) and pulse current dependency on temperature.
  • Increased avalanche capability.
  • Compatible with standard drivers.
  • Kelvin source provides up to 4 times lower switching losses Benefits.
  • Unique combination of high performance, high re.

More Datasheets from Infineon

Part Number Description
IMW65R050M2H MOSFET
IMW65R007M2H MOSFET
IMW65R010M2H SiC MOSFET
IMW65R015M2H MOSFET
IMW65R020M2H MOSFET
IMW65R026M2H 650V SiC MOSFET
IMW65R027M1H 650V MOSFET
IMW65R030M1H 650V MOSFET
IMW65R039M1H 650V MOSFET
IMW65R040M2H MOSFET