IMW65R107M1H Datasheet | Infineon

Public IMW65R107M1H Final datasheet Cool Si C™ M1 Cool Si C™ MOSFET 650 V G1 The 650 V Cool Si C™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Si C material characteristics, the 650V Cool Si C™ MOSFET offers a unique bination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. Features - Optimized switching behavior at higher currents - mutation robust fast body diode with low Qfr - Superior gate oxide reliability - Tj,max=175°C and excellent thermal behavior - Lower RDS(on) and pulse current dependency on temperature - Increased avalanche capability - patible with standard drivers - Kelvin source provides up to 4 times lower switching losses Benefits - Unique bination of high performance, high reliability and ease of use - Ease of use and integration - Suitable for topologies with continuous hard mutation - Higher robustness and system reliability - Efficiency improvement - Reduced system size leading to higher power density Potential applications - SMPS - UPS (uninterruptable power supplies) - Solar PV inverters - EV charging infrastructure - Energy storage and battery formation - Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial...