IPD052N10NF2S
IPD052N10NF2S is MOSFET manufactured by Infineon.
Features
- Optimizedforawiderangeofapplications
- N-Channel,normallevel
- 100%avalanchetested
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Productvalidation
Qualifiedaccordingto JEDECStandard
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
5.2 mΩ
Qoss
67 n C
51 n C
DPAK tab
2 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPD052N10NF2S
Package PG-TO252-3
Marking 052N10NS
Related Links
- Final Data Sheet
Rev.2.2,2022-10-10
Strong IRFETTM2Power-Transistor
Tableof Contents
Description
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