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IPD052N10NF2S - MOSFET

General Description

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Key Features

  • Optimized for a wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPD052N10NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 5.2 mΩ ID 118 A Qoss 67 nC QG 51 nC DPAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD052N10NF2S Package PG-TO252-3 Marking 052N10NS RelatedLinks - Final Data Sheet 1 Rev.2.2,2022-10-10 StrongIRFETTM2Power-Transistor IPD052N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .