IPD50N06S4-09 - Power Transistor

Features

N-channel - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD50N06S4-09 Product Summary V DS R DS(on),max ID 60 V 9.0 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4-09 Package Marking PG-TO252-3-11 4N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1).

Infineon

Datasheet Details

Part number	IPD50N06S4-09
Manufacturer	Infineon
File Size	160.94 KB
Description	Power Transistor
Datasheet	IPD50N06S4-09 Datasheet
Additional preview pages of the IPD50N06S4-09 datasheet.

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Full PDF Text Transcription

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N06S4-09 Product Summary V DS R DS(on),max ID 60 V 9.

Published: Apr 14, 2015 |