IPD50N06S4L-08 - Power Transistor

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD50N06S4L-08 Product Summary V DS R DS(on),max ID 60 V 7.8 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-08 Package Marking PG-TO252-3-11 4N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C,.

Infineon

Datasheet Details

Part number	IPD50N06S4L-08
Manufacturer	Infineon
File Size	159.81 KB
Description	Power Transistor
Datasheet	IPD50N06S4L-08 Datasheet
Additional preview pages of the IPD50N06S4L-08 datasheet.

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Full PDF Text Transcription

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N06S4L-08 Product Summary V DS R DS(on),max ID 60 V 7.

Published: Apr 14, 2015 |