• Part: IPD50N06S4L-12
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 159.97 KB
Download IPD50N06S4L-12 Datasheet PDF
Infineon
IPD50N06S4L-12
IPD50N06S4L-12 is Power Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 60 V 12 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-12 Package Marking PG-TO252-3-11 4N06L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power...