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OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD50N06S4L-12
Product Summary V DS R DS(on),max ID
60 V 12 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S4L-12
Package
Marking
PG-TO252-3-11 4N06L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
IPD50N06S4L-12 Datasheet
