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IPD50N08S4-13 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD50N08S4-13 Product Summary VDS RDS(on),max ID 80 V 13.2 mW 50 A PG-TO252-3-313 Type IPD50N08S4-13 Package Marking PG-TO252-3-313 4N0813 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V.

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Datasheet Details

Part number IPD50N08S4-13
Manufacturer Infineon
File Size 267.78 KB
Description Power-Transistor
Datasheet download datasheet IPD50N08S4-13 Datasheet
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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N08S4-13 Product Summary VDS RDS(on),max ID 80 V 13.2 mW 50 A PG-TO252-3-313 Type IPD50N08S4-13 Package Marking PG-TO252-3-313 4N0813 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=25A I AS - V GS - P tot T C=25°C T j, T stg - Value 50 50 200 76 31 ±20 72 -55 ...
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