• Part: IPD50N10S3L-16
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 180.20 KB
Download IPD50N10S3L-16 Datasheet PDF
Infineon
IPD50N10S3L-16
IPD50N10S3L-16 is Power Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 100 V 15 mΩ 50 A PG-TO252-3-11 Type IPD50N10S3L-16 Package Marking PG-TO252-3-11 QN10L16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS Gate source voltage2) V...