IPD50N10S3L-16
IPD50N10S3L-16 is Power Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
100 V 15 mΩ 50 A
PG-TO252-3-11
Type IPD50N10S3L-16
Package
Marking
PG-TO252-3-11 QN10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse
I AS
Gate source voltage2)
V...