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IPD50N10S3L-16 - Power Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • 100% Avalanche tested IPD50N10S3L-16 Product Summary V DS R DS(on),max ID 100 V 15 mΩ 50 A PG-TO252-3-11 Type IPD50N10S3L-16 Package Marking PG-TO252-3-11 QN10L16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T.

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Datasheet Details

Part number IPD50N10S3L-16
Manufacturer Infineon
File Size 180.20 KB
Description Power Transistor
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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD50N10S3L-16 Product Summary V DS R DS(on),max ID 100 V 15 mΩ 50 A PG-TO252-3-11 Type IPD50N10S3L-16 Package Marking PG-TO252-3-11 QN10L16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN I
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