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IPP018N03LF2S - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for a wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP018N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 1.8 mΩ ID 128 A Qoss 74 nC QG(0V..4.5V) 46 nC Type/Ordering Code IPP018N03LF2S Package PG‑TO220‑3 PG‑TO220‑t3ab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 018N03F2 Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.0 2024‑05‑25 Public StrongIRFET™ 2 Power‑Transistor, 30 V IPP018N03LF2S Table of Contents Description . . . . . . . .