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IPT015N10NF2S - 100V MOSFET

General Description

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Key Features

  • Optimized for a wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPT015N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑Channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified for applications according to the test conditions in the relevant tests of JEDEC JESD22 and J‑STD‑020. Table 1 Parameter VDS RDS(on),max ID Qoss QG Key performance parameters Value Unit 100 V 1.5 mΩ 315 A 204 nC 161 nC TOLL Tab Tab 12 345 6 78 8 7 65 4 32 1 Drain Tab Gate Pin 1 Source Pin 2-8 Part number IPT015N10NF2S Package PG‑HSOF‑8 Marking 015N10NS Related links ‑ Datasheet https://www.infineon.com 1 Revision 2.