PTFA041501E Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500.

Datasheet Details

Part number	PTFA041501E
Manufacturer	Infineon
File Size	457.87 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA041501E_Infineon.pdf

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced ceramic open-cavity packages .

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15.

Part Number	Description
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL	Thermally-Enhanced High Power RF LDMOS FETs