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PTFA041501E - Thermally-Enhanced High Power RF LDMOS FETs

General Description

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced ceramic open-cavity packages .

Key Features

  • Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
  • 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15.

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Datasheet Details

Part number PTFA041501E
Manufacturer Infineon
File Size 457.87 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA041501E Datasheet

Full PDF Text Transcription (Reference)

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.