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PTFA041501F

PTFA041501F is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
PTFA041501F datasheet preview

PTFA041501F Details

Part number PTFA041501F
Datasheet PTFA041501F / PTFA041501E Datasheet PDF (Download)
File Size 457.87 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F page 2 PTFA041501F page 3

PTFA041501F Overview

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA041501F Key Features

  • Broadband internal matching Typical CDMA performance at 470 MHz, 28 V
  • Average output power = 60 W
  • Linear Gain = 21 dB
  • Efficiency = 41% Typical CW performance, 470 MHz, 28 V
  • Output power at P-1dB = 175 W
  • Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • 15°C 25°C 90°C
  • See Infineon distributor for future availability
  • 0.07 2.48

PTFA041501F Distributor

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