PTFA041501F - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA041501F
Manufacturer	Infineon
File Size	457.87 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA041501F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA041501F, PTFA041501E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA041501F datasheet.

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15.

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Published: Aug 6, 2013 |