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PTFA041501F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA041501F datasheet PDF. This datasheet also covers the PTFA041501E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced ceramic open-cavity packages .

Key Features

  • Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
  • 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA041501E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA041501F
Manufacturer Infineon
File Size 457.87 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA041501F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.