PTFA041501GL Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500.

Datasheet Details

Part number	PTFA041501GL
Manufacturer	Infineon
File Size	445.02 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA041501GL_Infineon.pdf

The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced plastic open-cavity packages with copper flanges.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

45 Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 1.

Part Number	Description
PTFA041501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F	Thermally-Enhanced High Power RF LDMOS FETs
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PTFA071701F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL	Thermally-Enhanced High Power RF LDMOS FETs