PTFB191501F Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
PTFB191501F Key Features
- 45 15 IMD Low
- Broadband internal matc
- Part: PTFB191501F
- Manufacturer: Infineon (official site)
- Size: 322.39 KB
Related Infineon Datasheets
| Part Number | Description |
|---|---|
| PTFB191501E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB192503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB192503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB182503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB182503FL | Thermally-Enhanced High Power RF LDMOS FETs |