BF1009SR Description
Silicon N_Channel MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating voltage 9 V Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! It is not remended to apply external DC-voltage on Gate 1 in active mode.