IS41LV16100B Description
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
IS41LV16100B Key Features
- TTL patible inputs and outputs; tristate I/O
- Refresh Interval
- Auto refresh Mode: 1,024 cycles /16 ms
- RAS-Only, CAS-before-RAS (CBR), and Hidden
- JEDEC standard pinout
- Single power supply: 3.3V ± 10%
- Byte Write and Byte Read operation via two CAS
- Industrial Temperature Range: -40oC to +85oC
- Lead-free available