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IS41LV16105 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

General Description

The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2.

Max.

RAS Access Time (tRAC) Max.

Key Features

  • www. DataSheet4U. com 1M x 16 (16-MBIT).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS41C16105 IS41LV16105 FEATURES www.DataSheet4U.com 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: 1,024 cycles/16 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16105) 3.3V ± 10% (IS41LV16105) • Byte Write and Byte Read operation via two CAS • Industrail temperature range -40oC to 85oC 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems.