IS41LV16100S Datasheet | ISSI

FEATURES - Extended Data-Out (EDO) Page Mode access cycle - TTL patible inputs and outputs; tristate I/O - Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms - JEDEC standard pinout - Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S) - Byte Write and Byte Read operation via two CAS - Industrail Temperature Range -40°C to 85°C .. DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41C16100Sand IS41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance puting systems, and peripheral applications. The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2. EY TIMING PARAMETERS Parameter Max. RAS Access Time (t RAC) Max. CAS Access Time (t CAC) Max. Column Address Access Time (t AA) Min. EDO Page Mode Cycle Time (t PC) Min. Read/Write Cycle Time (t RC) -45(1) 45 11 22 16 77 -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns Note: 1. 45 ns Only for Vcc = 3.3V. PIN CONFIGURATIONS 50(44)-Pin TSOP II VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 36 35 34 33 32 31 30 29 28 27 26 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND 42-Pin SOJ VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33...